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Japan develops basic techs for next-generation semiconductors

  • May 17, 2018
  • , Jiji Press , 9:09 a.m.
  • English Press

 Tokyo, May 17 (Jiji Press)–A Japanese team has said it established basic technologies to make next-generation semiconductors based on gallium nitride crystal.

The semiconductors would be good for use in high-voltage, large-current power control devices for electric vehicles, next-generation light-emitting diode microdisplays and equipment for wireless power transmission by radio waves and laser beams, according to the team.

The team includes Nagoya University Prof. Hiroshi Amano, one of the scientists who won the 2014 Nobel Prize in Physics for the invention of blue LEDs based on gallium nitride.

Power control devices using the new semiconductors “would not be competitive in terms of costs, compared with the conventional devices using silicon-based power semiconductors,” Amano told a news conference in Tokyo on Wednesday.

“But we can beat them if we add values, such as power-saving and other performance, long product lives and reduced sizes,” he said.

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